Abstract

The BRAQWET (varrier, reservoir and quantum well electron transfer) structure, which has shown great potential for low voltage, high contrast ratio modulators, was first developed in the InAlGaAs/lnP materials system. To date, there are few results in the GaAs/AlGaAs² and in the InGaAsP systems³ The InGaAsP structures had significant leakage current which limits their usefulness for practical applications. We have recently developed extensive models for describing the band structure, energy levels, and electrooptic effects in BRAQWET structures.^4,5 Using these models, we designed a new InGaAsP BRAQWET structure with leakage current reduced by a few orders of magnitude. In this paper, we present the first experimental results of our measurements, which indeed show the reduction of leakage current by three orders of magnitude relative to previous designs.

© 1993 Optical Society of America