Abstract

Much research has been directed to the development of Ga_0.5In_0.5P lasers emitting in the visible (red) spectral region, and the device parameters of these lasers are of considerable interest. We report here the measurement of the current dependent gain spectra and current-induced wavelength shifts of the Fabry-Perot modes of index¹ and gain-guided² lasers grown by MOCVD by Toshiba that had 0.06 μm thick Ga_{0 5}In_0.5P active layers, 1.5 μm thick Al_0.35Ga_0.15In_0.5P cladding layers, and was lattice-matched to misoriented GaAs substrates. The index - and gain-guided lasers had -5 and ~7 μm wide active layers arid thresholds currents of 35 mA and 65 mA respectively.

© 1993 Optical Society of America