Abstract

CdSe and CdS are interesting materials for basic research in the II-VI-semiconductor field because of the proposed type-II CdS- CdSe superlattices.¹ After successfully growing CdS thin films epitaxially on various substrates,² we grew CdSe films on GaAs(111), The substrates with 10 x 10 mm² cross section were left unetched, heated up to 590°C for 3 min in the growth chamber after degassing in the loading chamber prior to growth, The substrate temperature during growth was between 400° and 500°C, the growth rate ranged about 1-5 µm/h.

© 1993 Optical Society of America