Abstract
The purity and concentration of materials deposited under high vacuum during semiconductor growth is a significant factor in the "art" of the fabrication, processes. A lack of control of the fluxes in the deposition process can result in high failure rates and defects. Optical/laser probing of the gas phase species involved in the molecular beam epitaxial (MBE) growth of III-V semiconductor materials is an important, unexplored method of determining flux. With the incorporation of noninvasive laser probes into advanced generations of MBE machines, it will be possible to carry out in situ diagnostics to quantify and characterize the growth process, to provide optical feedback for adjusting of species concentrations, and to determine the purities of materials used during semiconductor fabrication.
© 1993 Optical Society of America
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