Abstract
The potential of ferroelectric materials as high density, low cost, electrical switch able two-stage memory devices have been widely recognised for decades,1 Recently Guthner and his colleagues2,3 used needle electrode and scanning force microscopy for poling and reading the polarization of ferroelectric domain in the region of about 1-µm. It seems, however, to be a serious restriction for practical ferroelectric memory that the metallic tip was in mechanical contact with the surface of ferroelectric sample while in writing and reading. The non-contact optical read-out, which has been tried by Wu et al.,4 was not successful due to the low density, high switching voltage and high bit cost. Herein, we present an optical probe5 and a metallic needle electrode, poling technique for locally detecting (reading) and poling (writing) ferroelectric domains, respectively, in 1/2 micrometer region of PZT thin film.
© 1993 Optical Society of America
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