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Conferences > CLEO > 1993 > CThQ > CThQ5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CThQ5

1.0-mA-threshold lasers by impurity-induced disordering

W. X. Zou, K.-K. Law, D. B. Young, and J. L. Merz

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Abstract

Low threshold current is important for many applications of semiconductor lasers such as optical computing, optical interconnection, and optical communication. We have reported a laser fabricated by impurity-induced disordering (IID) with threshold current 2.2 mA under room-temperature cw operation,1 here we report on an optimized 2-D laser with threshold current as low as 1.0 mA under room-temperature cw operation.

© 1993 Optical Society of America

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