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Conferences > CLEO > 1993 > CThQ > CThQ2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CThQ2

GaInP/AlInP quasi-quaternary crystals and 607-640-nm wavelength quasi quaternary lasers grown by gas-source-molecular beam epitaxy

Yawara Kaneko, Katsumi Kishino, Ichirou Nomura, and Akihiko Kikuchi

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Abstract

Short wavelength lasers of 600-630 nm are very attractive for optical information processing, The gas-source molecula beam epitaxy (GSMBE) is a very suitable technology to fabricate 600-630 nm wavelength GaInP/AlInP lasers.1-3 For realizing high- performance short wavelength lasers, however the sequential, growth of multilayered AlGaInP is indispensable.

© 1993 Optical Society of America

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