Abstract
We have recently reported on the fastest metal-semiconductor-metal (MSM) photodetectors made on GaAs, with electrical responses as fast as 0.87 ps.1 Preliminary results on silicon MSM diodes,2,3 however, indicated a much slower response of 14 and 11 ps, respectively. Further, the diode recovery time was also found tobe greater than 1 ns. In this communication, we demonstrate that the response time of silicon MSM diodes can be improved to 7.5 ps when the light penetration depth is smaller than the finger separation. Dependence of the diode response to changes in wavelength and light intensity was also measured.
© 1993 Optical Society of America
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