Abstract

We report the results of a systematic study performed on the MBE growth and electroabsorption characteristics of AlGaAs/GaAs P-J (MQW)-N transverse electroabsorption modulators on n-type GaAs, utilizing novel quantum well structures in the intrinsic region. In this region 50 wells were separated by barriers composed of 30 monolayers of AlAs. The novelty is in the well structure where effectively linear band gap grading was incorporated using a chirped superlattice scheme. We refer to these wells as chirped superlattice asymmetric wells. (CSAW) Aseries of CSAW were grown and studied in pairs: first member of the pair had the effective linear bandgap grading upwards in the growth direction, CSAW (UP), and the second type had the opposite grading direction, CSAW(DN).

© 1993 Optical Society of America