Abstract

The use of high hydrostatic pressures to study the behavior of semiconductor lasers offers the unique possibility of modifying the band structure and identifying some of the loss mechanisms that affect the laser characteristics.^1,2 In multiple quantum well lasers, the effect of pressure can be correlated with the effect of strain. We report the first simultaneous optical and electrical measurements on InGaAsP buried heterostructure lasers utilizing a diamond anvil cell (DAC). This technique allows us to explore changes in the laser behavior at pressures significantly larger than those previously reported.¹ To characterize our lasers, we measured the light output vs current and the laser spectra at different pressures up to l.5GPa.

© 1993 Optical Society of America