Abstract

Extremely low threshold current (I_th) strained-layer quantum well (SL-QW) laser diodes (LDs) were examined using the combination. of short cavity and high reflective (HR) coating.^1,3 However, the maximum CW operating temperature was limited to around 100°C,^2,3 since the SL-QW LDs, especially in the compressive strain case, which are few in number and which have only a thin layer of quantum wells, have high threshold, carrier density. As a result, they suffer from the Auger recombination. Therefore, a large amount of quantum wells and cavity loss reduction is thought likely to improve the temperature characteristics. In this paper, we have investigated the temperature dependence of the I_th in 1.3 μm compressively SL-QW LDs with HR coatings as a function of the well number (N_w).

© 1993 Optical Society of America