Abstract

We report the flip-chip integration of heterojunction bipolar transistors (HBTs) and microlenses with vertical-cavity surface-emitting lasers (VCSELs). In addition, we present modeled light-out vs voltage characteristics for field-effect transistors (FETs) integrated with VCSELs and describe our efforts to integrate the two. HBT/VCSEL and FET/VCSBL devices exhibit lasing thresholds of 65-μΑ (experimental) and 1.0 volt (modeled), respectively. In addition, we use microlenses to produce diffraction limited one-to-one imaging of 10-degree far field VCSEL outputs. This integrated devices are ideally suited for free-space optical interconnection of multichip modules; optical neural networks; multichannel-multiwavelength fiberoptic communication; and print and scan heads for digital laser printing, scanning, and optical memory. These are just a few of the sophisticated functions and applications on the horizon of this breakthrough technology.¹

© 1993 Optical Society of America