Abstract
Common to all recently demonstrated optoelectronic sources of pulsed THz radiation has been the problem to properly characterize the source with receivers of limited bandwidths. The broadest bandwidth receivers have used ion-implanted, silicon-on-sapphire (SOS), photoconductive switches.1 An alternative method of source characterization, which bypasses the problems of receiver bandwidth, uses interferometric techniques and a power detector.2 Here, we directly compare the performance of an optoelectronic THz interferometer with an ultrafast photoconductive receiver to characterize a broadband THz source.3
© 1992 Optical Society of America
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