Abstract
Photonic devices using quantum wire (QWK) structures have attracted considerable interest in recent years. Our approach of growing GaAs/AlGaAs QWRs on V-grooved substrate has proved to be a useful method for building QWR lasers, leading to sub-mA threshold currents and room temperature oepration of these devices.1,2 In this paper we report what we believe to be the first strained- layer InGaAs/CaAs QWR lasers. The active region of these lasers consists of lateral, dense (240-nm pitch) arrays of crescent shaped QWRs which are formed in. situ during organometallic chemical vapor deposition (OMCVD) on a patterned substrate. Previous attempts to make such QWR laser arrays by etching and regrowth resulted in operation at low temperature only,3 due to nonradiative recombination at the damaged wire interfaces, Our devices operate at room temperatures and exhibit spectral features due to two-dimensional (2-D) quantum confinement.
© 1992 Optical Society of America
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