Abstract
Substrate misorientation effects were given attention as a technique to shorten the lasing wavelength in MOCVD-grown AlGaInP lasers.1-3 Recently, using this effect the threshold current density (Jth) of 629-nm MQW lasers was reduced to 2.0 kA/cm2, where the lasers were fabricated by gas-source molecular beam epitaxy (GS-MBE) on 15° misoriented (100) GaAs substrates.4
© 1992 Optical Society of America
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