Abstract
Much research has been directed toward the study of all-optical nonlinearities in semiconductor optical waveguides because of their potential in signal processing. Nonresonant nonlinearities are of interest because of their ultrafast response but are typically weak.1 Carrier-enhanced nonlinearities are of interest for use in optical gates because of the significantly lower powers required, but they are typically limited in speed to the recombination time of photoexcited carriers.2 In this paper we report the electrical bias dependence of such nonlinearities.
© 1992 Optical Society of America
PDF ArticleMore Like This
J.E. Ehrlich, D.J. Goodwill, D.T. Neilson, A.C. Walker, C.I. Johnston, and W. Sibbett
TuB4 Nonlinear Guided-Wave Phenomena (NP) 1991
Takayuki Yamanaka, Yuzo Yoshikuni, Wayne Lui, Kiyoyuki Yokoyama, and Shunji Seki
MD4 Integrated Photonics Research (IPR) 1992
C. Coriasso, C. Cacciatore, D. Campi, A. Stano, C. Rigo, L. Faustmi, and G. Leo
CWG4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996