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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CTuF2

Effect of compressive strain (0-1.8%) on performance parameters in l.-5μm laser diodes using wide quantum wells

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Abstract

Although by now there have been numerous experimental efforts at measuring the performance of long wavelength lasers that incorporate strain in a QW active region,1,2 a completely consistent measure of these strain benefits has not been performed vis-á-vis unstrained devices. Since the details of the various loss mechanisms (Auger currents and intervalence band absorption, for example) are a function of wavelength and QW thickness, it is not possible to make a comparison that keeps both of these variables constant if the QWs are made of the ternary InGaAs while exploring strain over a meaningful range.

© 1992 Optical Society of America

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