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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CThI52

Synthesis of insulator and passivation films applicable to a 64 Mbit DRAM

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Abstract

In ULSI technology, integrated circuits have become more dense and complicated. A trench or a stacked capacitor cell design applicable to a 64Mbit DRAM has been proposed. These devices are fabricated with many kinds of thin film such as poly silicon, silicon oxide, and silicon nitride, so their quality and the uniformity closely influences the performance and reliability of the devices.

© 1992 Optical Society of America

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