Abstract
In the semiconductor process, the fabrication of SiO2 as an insulator is needed. Conventional pattern etching of SiO2 is performed by lithography after the thermal oxidation of Si. If the pattern deposition of SiO2 films on Si wafer is to be successful, it would be useful to simplify the semiconductor process. Boyer has reported that SiO2 deposition on Si wafer by an ArF laser decomposes in an atmosphere of SiH4 and N2O mixed gases at 800oC substrate temperature.1 But the deposition of transparent SiO2 films was difficult at room temperature.
© 1992 Optical Society of America
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