Nonlinear switching in a regime of optical gain in In GaAs/GaAs SQW waveguides

P. Li Kam Wa; T. W. Kao; A. Miller; M. Ogawa; R. M. Park

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CThI23

Nonlinear switching in a regime of optical gain in In GaAs/GaAs SQW waveguides

P. Li Kam Wa, T. W. Kao, A. Miller, M. Ogawa, and R. M. Park

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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Thursday CLEO Poster Session (CThI)

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P. Li Kam Wa, T. W. Kao, A. Miller, M. Ogawa, and R. M. Park, "Nonlinear switching in a regime of optical gain in In GaAs/GaAs SQW waveguides," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CThI23.

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Abstract

All-optical switching due to nonlinear Fabry-Perot modulation has been obtained in laser diodes electrically biased below lasing threshold. The advantage of such devices over their passive counterparts is achieving amplification of the input optical signal. This eliminates the problem of fan-out capabilities of all-optical switching devices. The mechanism for the nonlinear refraction arises through gain saturation by optical depletion of carriers.

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