Abstract

Second-generation infrared image sensors with multiplexed outputs are becoming available in a variety of infrared detector materials, including photovoltaic HgCdTe, PtSi, and InSb, and photoconductive extrinsic silicon, PbS and PbSe. This paper reviews the background of their evolution and summarizes the formats and configurations available now in prototype production. Capsule data summaries are provided to assist in understanding the operating range of spectral response, temperature, and other performance parameters such as uniformity for each detector material type.

© 1992 Optical Society of America