Abstract
The performance of photorefractive materials is determined by the electrooptic tensor as well as by the photo-induced charge transport mechanisms of non-centro-symmetric crystals. Of these two properties, the photo-induced charge transport can be readily modified and enhanced by application of electric fields or, more intrinsically, by adjusting charge donor and trapping levels via incorporation of compositional or structural defects during crystal growth. Recent advances in thin film deposition and multilayer epitaxial growth technology developed for the CuO2 high temperature superconductors have suggested an alternative approach: controlled "defect engineering" in thin crystalline electrooptic films. The growth of high quality electrooptic and photo-sensitive films, and artificially layered heterostructures of the two, offers unprecedented opportunities for understanding the role of defect content (in the form of compositional and interfacial doping, lattice strain, etc.) on the photo-induced charge transport properties. This could lead to the synthesis of new combinations of materials with enhanced photorefractive properties optimized for applications such as parallel access holographic storage at short wavelengths and real-time holographic processing at long wavelengths.
© 1992 Optical Society of America
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