Dry developing of photoresist by two-color excimer lasers

M. Murahara; S. Aomori; M. Yonekawa

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CWF55

Dry developing of photoresist by two-color excimer lasers

M. Murahara, S. Aomori, and M. Yonekawa

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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M. Murahara, S. Aomori, and M. Yonekawa, "Dry developing of photoresist by two-color excimer lasers," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CWF55.

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Abstract

Dry developing of photoresist without wet process is needed. If the dry developing is used in the lithography process, high through-puts can be obtained, and minute circuit patterns can be fabricated. There are the ways to develop, such as plasma, x-rays, and heating, and many papers on photoresist have been reported.^1,2,3

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