Abstract
Among other wide-gap semiconductors, ZnSe has long been considered the most promising material for fabrication of short wavelength semiconductor light-emitting diodes and lasers. To date there have been no reports of successful low-voltage operation of p-n junction in ZnSe. In the absence of the most efficient method of pumping—current injection, the research has concentrated on electron-beam1 and optical pumping2 of ZnSe and other wide-gap semiconductors.
© 1991 Optical Society of America
PDF ArticleMore Like This
J. Ding, H. Jeon, A. V. Nurmikko, H. Luo, N. Samarth, and J. Furdyna
CWF32 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991
H. Okuyama, F. Hiei, and K. Akimoto
PD1 Compact Blue-Green Lasers (CBGL) 1992
Z.R. Lindsey, M.W. Rhoades, V.V. Fedorov, S.B. Mirov, and R.P. Camata
AM5A.19 Advanced Solid State Lasers (ASSL) 2016