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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWF33

Low-threshold operation of optically pumped double-heterostructure ZnSe/ZnSxSe1−x lasers

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Abstract

Among other wide-gap semiconductors, ZnSe has long been considered the most promising material for fabrication of short wavelength semiconductor light-emitting diodes and lasers. To date there have been no reports of successful low-voltage operation of p-n junction in ZnSe. In the absence of the most efficient method of pumping—current injection, the research has concentrated on electron-beam1 and optical pumping2 of ZnSe and other wide-gap semiconductors.

© 1991 Optical Society of America

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