In0.2Ga0.8As/GaAs strained quantum-well lasers

Paul R. Berger; Niloy K. Dutta; John Lopata; Naresh Chand

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CTuA7

In_0.2Ga_0.8As/GaAs strained quantum-well lasers

Paul R. Berger, Niloy K. Dutta, John Lopata, and Naresh Chand

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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Strained Lager GaAs Lasers (CTuA)

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P. R. Berger, N. K. Dutta, J. Lopata, and N. Chand, "In0.2Ga0.8As/GaAs strained quantum-well lasers," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CTuA7.

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Abstract

Semiconductor lasers emitting near 0.98 μm and fabricated by using In_0.2Ga_0.8As/GaAs quantum-well (QW) structures are of considerable interest for application as pump lasers for erbium-doped glass fiber amplifiers.^1,2 The linewidth enhancement factor of these lasers has been determined from the spontaneous emission spectra below threshold. The measured linewidth enhancement is found to be about 1.0 compared to a typical value of ~5.7 observed for InGaAsP/InP double heterostructure lasers (DH) and ~3.5 for InGaAsP/InP QW lasers. The measured value is compared with the theoretical value. The line-width enhancement factor is expressed as

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