Abstract
It is important to control the electroabsorption saturation intensity in multiple quantum-well (MQW) devices used for modulation1,2 and optical logic.3,4 Although phase-space filling is believed to be the dominant mechanism of absorption saturation in the absence of a field in MQWs, Cavicchi et al.5 demonstrated that large photogenerated hole populations could screen fields applied to MQWs. This effect is the dominant cause of electroabsorption saturation in GaInAs/InP MQWs at room temperature.6
© 1991 Optical Society of America
PDF ArticleMore Like This
Thomas H. Wood, John Z. Pastalan, Charles A. Burrus, Bart C. Johnson, Barry I. Miller, Jose L. de Miguel, Uziel Koren, and Martin G. Young
CPD6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990
P.J. Stevens and G. Parry
TuE12 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989
Thomas H. Wood, John Z. Pastalan, Charles A. Burrus, Barry I. Miller, Jose L deMiguel, Uziel Koren, and Martin Young
TuG4 Integrated Photonics Research (IPR) 1990