Abstract

The direct doping of Si into GaAs using an XeCl excimer laser of 8 ns in pulse width generates the sheet resistance as low as 60 Ω/□ with an SiH₄ gas pressure of 100 Torr and a laser fluence of 170 mJ/cm² in 100 pulses irradiation.¹ The n- type conduction which means that the Si atoms may occupy Ga site is obtained in the case of high pressure of 100 Torr. The doping profile of Si in GaAs formed by this technique is limited in a very shallow region of less than 110 nm in depth with extremely high concentration of (2–3) × 10²⁰ cm⁻³, and the doping depth shows proportional increase with laser fluence. The laser fluence of 170 mJ/cm² increases the efficiency of carrier generation of Si in GaAs by the ratio of 6.1 as compared to the case of 56 mJ/cm².

© 1991 Optical Society of America