Performance characteristics of InGaAs/InP strained quantum-well lasers

S. J. Wang; Y. Twu; T. Tanbun-Ek; R. A. Logan; N. K. Dutta; A. H. Piccirilli

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CFD6

Performance characteristics of InGaAs/InP strained quantum-well lasers

S. J. Wang, Y. Twu, T. Tanbun-Ek, R. A. Logan, N. K. Dutta, and A. H. Piccirilli

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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Semiconductor Lasers for Communications (CFD)

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S. J. Wang, Y. Twu, T. Tanbun-Ek, R. A. Logan, N. K. Dutta, and A. H. Piccirilli, "Performance characteristics of InGaAs/InP strained quantum-well lasers," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CFD6.

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Abstract

Strained quantum-well (QW) lasers emitting near 1.5 μm are of interest for fiber optic communication systems because of their potentially lower chirp, lower cw linewidth and high power.^1-5 This talk describes the fabrication and the performance characteristics of strained layer quantum well InGaAs/lnP laser emitting near 1.5 μm.

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