Abstract

The laser controlled etching of bulk compound semiconductors in aqueous solutions using a micrometer sized focused beam is well studied¹ and has been used to form a number of unique microstructures. This process is controlled by the transport of photogenerated carriers to the semiconductor-solution interface. The resultant spatial distribution of carriers that reach the semiconductor surface controls the morphology of the etched feature. When this same technique is used to etch multilayered semiconductor structures, one can expect the varying optical and electrical properties across each material discontinuity to affect strongly the etching process. In particular, the interfacial electric field and carrier diffusion within each layer can affect the flow of the photocarriers to the semiconductor- solution interface.

© 1990 Optical Society of America