Abstract
Fabrication of GaAs/GaAlAs surface emitting and edge emitting laser diodes without cleaving facets is a key issue for monolithic two dimensional optoelectronic integration. Although various etching techniques have been reported so far, lasers formed by these methods have shown only modest success in power output and slope efficiency. The reasons are as follows: 1) The etching tolerances are very stringent. The angle of the 45° and 90° mirrors must be controlled to within ± 2° and the facet smoothness has to be <0.1 μm RMS; 2) The process used to form the mask has to provide smooth and vertical photoresist sidewalls and be capable of precise transfer of the pattern to the GaAs substrate.
© 1990 Optical Society of America
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