Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CMH1

InGaAs strained-layer lasers: a technology survey

Not Accessible

Your library or personal account may give you access

Abstract

Recent milestones in strained-layer technology have encouraged accelerated activity in connection with several major applications. Modern epitaxy, to which the InGaAs pseudomorphic lasers owe their existence, has advanced to the point where it is now clear that these long wavelength devices can rival or surpass their GaAs counterparts in performance and reliability. In the last year alone we have seen that strain accommodation works, that performance degradation need not accompany the shift to low band gap, and that pseudomorphic laser devices are more reliable than many thought possible. All this puts such lasers in strong contention for (rare earth glass) pump source as well as direct beam applications.

© 1990 Optical Society of America

PDF Article
More Like This
InGaAs-GaAs strained layer quantum well heterostructure lasers

J. J. COLEMAN
WJ1 Optical Fiber Communication Conference (OFC) 1990

330-mW operation of buried-heterostructure strained-layer InGaAs lasers

T. R. Chen, L. Eng, Y. H. Zhuang, Y. J. Xu, H. Zarem, and A. Yariv
MK8 OSA Annual Meeting (FIO) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved