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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CMC5

Room temperature cw operation, of 671-nm GalnAsP/AlGaAs red light injection lasers with VSIS structure grown by LPE

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Abstract

Red light 0.6-μm wavelength injection lasers are attractive as light sources in the optical information, measurement, and plastic fiber communication fields. Recently, the threshold current density of a 670-nm wavelength GalnAsP/AlGaAs laser1 fabricated by LPE was drastically reduced (down to 1.7 kA/cm2)2 from 5.6 kA/cm2. The GaInAsP/AlGaAs laser has the great advantage of being able to achieve easily a sophisticated mode-controlled structure with a built-in inner current confinement scheme, such as in the V-channeled substrate inner stripe (VSIS) laser,3 compared with GaInP/AlGaInP lasers4 grown using MOCVD or MBE.

© 1990 Optical Society of America

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