Abstract
The material system (AlxGa1−x)0.47In0.53As lattice matched to the InP substrate is of interest for semiconductor lasers because of the enormous tailorable wavelength range from 0.9 to 1.65 μm.1 Lasers made with this material system should be useful not only for pumping fiber amplifiers but also for multiple wavelength lasers on one chip, frequency doubling, and integration with high speed electronic and other optical devices.
© 1990 Optical Society of America
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