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Conferences > CLEO > 1990 > CFA > CFA1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CFA1

High power single stripe SCH SQW InGaAsP/GaAs pumping diodes

D. Z. GARBUZOV, A. B. GULACKOV, A. V. KOCHERGIN, A. P. SHKURKO, N. A. STRUGOV, A. L. TER-MARTIROSYAN, and V. P. CHALYI

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Abstract

A version of the LPE technique with layer deposition on a moving substrate was successfully used earlier for SCH SCW laser fabrication in InGaAsP/InP and InGaAsP / GaAs systems.1-3 It was shown in Ref. 2 that, using long cavity SQW diodes, power conversion efficiency (PCE) as high as 66% can be achieved for SCH InGaAsP/GaAs lasers.

© 1990 Optical Society of America

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