Abstract
The need for wide bandwidth PIN photodiodes is becoming more widespread as the transmission rates increase in optical communication systems operating at wavelengths of 1.3 or 1.55 µm. However, to be used successfully in these high data rate systems, these devices must be reliable. To date, most reported wide bandwidth PIN photodiodes for 1.3-µm/1.55-µm wavelength operation have structures in which the pn junction is formed by mesa isolation, which leads to problems of dark current drift and short lifetime without careful passivation.
© 1989 Optical Society of America
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