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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WC4

Control of the self-sustained pulsating frequency in high power AlGaAs MOW semiconductor lasers

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Abstract

Because of their short coherent lengths, self-sustained pulsating AlGaAs semiconductor lasers are attractive as low noise light sources in optical disk systems. Self-sustained pulsation occurs in index guide lasers having a small refractive index difference in the lateral direction of the active layer. Therefore, kinks due to hole burning appear at output power levels of <10 mW in conventional self-sustained pulsating lasers. Recently it has been reported that kink levels can be remarkably improved by introducing a multiquantum well (MQW) structure in the active layer.1 This is because the carrier-induced refractive index change in the MQW laser is smaller than that in the double heterostructure (DH) laser.2,3

© 1989 Optical Society of America

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