Abstract
A high power, narrow single-lobed broad area laser diode is attractive because of its lateral coherence and its output power dependence on beam divergence. Experimentally only 50-100-μm wide aperture laser diodes have been discussed. For ultrahigh power laser diodes of <10 W, further broad area laser diodes are desired. We report a single-lobed 350-μm wide aperture broad area laser diode with a short period superlattice barrier fabricated by MBE and discuss the mesa-width dependence.
© 1989 Optical Society of America
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