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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper TUE2

Diode laser pumped Tm,Ho:YLF room temperature laser

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Abstract

The Ho ion upper state lifetime in YLF is ~50 times that of an Nd ion in YAG crystal. This provides a highly suitable medium for Q-switching to obtain high peak power pulses. At room temperature, the Tm.Ho: YLF laser is basically a three-level laser system since the Ho lower laser level is ~1.5 kT above the ground state of the ion. Thus reabsorption losses result in a higher lasing threshold. The proper crystal should be long enough to absorb a significant amount of the pump beam while short enough to minimize reabsorption losses.

© 1989 Optical Society of America

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