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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THI4

Picosecond HEMT photodetectors

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Abstract

We summarize our efforts to develop high-speed high electron mobility transistor photodetectors these several years. Different mechanisms have been proposed for the photodetection capability of planar FET structures, such as photocurrent, photovoltaic generation1, or photo-induced gate bias voltage change.2

© 1989 Optical Society of America

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