Abstract
We report room-temperature pulsed and cw lasing at 980 nm in an optically-pumped vertical cavity structure1 grown by molecular beam epitaxy (MBE) containing a single quantum well (SQW) of In0.2Ga0.8As.
© 1989 Optical Society of America
PDF ArticleMore Like This
J. L. Jewell, K. F. Huang, K. Tai, Y. H. Lee, R. J. Fischer, S. L. McCall, and A. Y. Cho
QWD7 Photonic Switching (PS) 1989
Janet L. Jewell, Y. H. Lee, S. Walker, A. Scherer, J. P. Harbison, L. T. Florez, and S. L. Mccall
TUP6 OSA Annual Meeting (FIO) 1989
J. L. Jewell, A. Scherer, S. L. McCall, B. Van der Gaag, E. Clausen, J. P. Harbison, and L. T. Florez
JThA2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991