Abstract
Laser-induced chemical vapor deposition (LCVD) is proving to be an attractive single-step maskless material deposition technique for numerous microelectronics applications. In the most frequently used LCVD process, laser light is focused to a small spot on a substrate to produce a locally heated region where metal is deposited by thermal decomposition of a vapor phase precursor. Because of the very small dimensions of the LCVD reaction site, few measurements have been made of the reaction temperature during deposition,1 even though it has direct bearing on both the efficiency of the thermal decomposition and the quality of the deposited metal. We now demonstrate that IR emission radiometry can provide a simple noncontact in situ temperature monitor for LCVD with a spatial resolution of the order of 10s of microns.
© 1988 Optical Society of America
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