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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WQ2

Nonlinear optical absorption in semiconductor epitaxial depletion regions

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Abstract

Recent investigations of nonlinear absorption in doping superlattices (nipi structures) demonstrate that the interaction of photogenerated carriers with internal electric fields can produce large optical nonlinearities at low input power.1 Following this line of reasoning, we have studied the optical nonlinearities in unbiased epitaxial Schottky barrier depletion regions. We show that the high electric fields in the depletion region can be modulated by photogenerated carriers trapped in the region. The decrease in internal electric field with applied light leads to large changes in the absorption of the device at low input optical power. This nonlinearity is particularly attractive in light of the extreme simplicity of fabrication of these depletion regions (in contrast to nipi structures).

© 1988 Optical Society of America

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