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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WQ1

Use of four-wave mixing spectroscopy in semiconductor material studies

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Abstract

Frequency domain laser spectroscopy has been most often used to provide information on the internal Hamiltonian of the resonant system. In recent work, however, we have shown that by analysis of frequency domain four-wave mixing (FWM) line shapes, it is possible to obtain relaxation rates which reflect how the resonant system interacts with its environment. In addition, these experiments are performed with low-intensity cw lasers and give experimental information quite distinct from information obtained with high-intensity pulsed lasers.

© 1988 Optical Society of America

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