GaAs/GaAlAs CBH surface-emitting lasers grown by MOCVD and a 2-D locked laser array

F. KOYAMA; K. TOMOMATSU; K. IGA

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper WO5

GaAs/GaAlAs CBH surface-emitting lasers grown by MOCVD and a 2-D locked laser array

F. KOYAMA, K. TOMOMATSU, and K. IGA

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Surface-Emitting Lasers (WO)

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F. KOYAMA, K. TOMOMATSU, and K. IGA, "GaAs/GaAlAs CBH surface-emitting lasers grown by MOCVD and a 2-D locked laser array," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper WO5.

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Abstract

A surface-emitting (SE) laser with a vertical cavity is attractive for lightwave communications, laser disks, and optical parallel processing.¹ A circular buried heterostructure (CBH) laser was shown to be helpful in reducing the threshold.² So far, CBH SE lasers have been fabricated by LPE growth. On the other hand, the MOCVD growth is more effective due to its high producibility and thickness controllability.

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