Abstract
We present a new technique for probing the surface electric field between metallic contacts on semiconductors. An electrooptic sampling crystal was used to probe the electric field so that a profile of the field could be obtained directly in real time. This electrooptic imaging technique was used to observe the electric field between contact pads on a photoconductive switch as the field developed. The effect of the semiconductor’s di-electric properties on the surface field was also observed.
© 1988 Optical Society of America
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