Abstract
The potential integration of the optoelectronic capabilities of GaAs with the highly developed integrated circuit technology of Si has motivated a great deal of effort toward fabricating GaAs devices—particularly lasers—in epitaxial layers grown on Si substrates. A GaAs-on-Si detector can take advantage of the high carrier mobilities and optical absorption coefficient of GaAs and serve as a high-speed receiver in a composite GaAs/Si optoelectronic circuit.
© 1988 Optical Society of America
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