Abstract

To obtain a low-current-threshold stable single-mode operation of a semiconductor laser, so far most of the GaAIAs/GaAs lasers with a 0.7-0.9μm lasing wavelength need to make the stripe contact on the surface of the epitaxial wafer and align the stripe with the built-in waveguide. For this, a series of techniques is used, such as mask deposition, photolithography, Zn diffusion, or proton bombardment. Such complexities in the fabrication procedure not only reduce the yield but also lessen the reliability. In addition, the alignment of the stripe contact with the built-in waveguide is not reliable; thus the characteristics of the lasers are affected.

© 1988 Optical Society of America