Abstract

Short-wavelength DFB lasers with a GaAs substrate of 700-800-nm emission are desirable for devices in the fields of sensing and information processing with optics, such as a fiber-optic gyroscope, and also in optoelectric integration devices such as an integrated-optic disk pickup. However, there are some difficulties in fabricating the 700-800-nm AIGaAs/GaAs DFB lasers compared with the 1.55-μm InGaAsP/lnP DFB lasers. One greatest difficulty has been said to be that the oxidized film on the AIGaAs waveguide layer surface, which is formed easily in the etching process, makes it impossible to obtain high-quality successive layers.

© 1988 Optical Society of America