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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper THM30

High-resolution electrical imaging of HgCdTe surface and MIS structures

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Abstract

Laser beam-induced current (LBIC) imaging has been used to obtain spatial maps of electrically active defects in HgCdTe and also to study p-n junction IR detector arrays of HgCdTe without making contacts to individual detector elements.1 The LBIC signal is produced by raster scanning a focused laser spot over the surface of the sample and measuring the differential current created in the semiconductor as a function of position. The differential current is caused by the redistribution of charge in a region where the potential difference is larger than kT/q, resulting in the separation of photon-induced electron-hole pairs. The resultant image produced by these measurements provides a spatial image of electrically active regions in the semiconductor.

© 1988 Optical Society of America

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