Abstract
Long wavelength (1.3 – 1.55 um) diode lasers have exhibited an undesirably sensitive temperature dependence of threshold current, the so-called TO problem. Several mechanisms have been investigated as the source of this -behavior, including carrier leakage and Auger recombination. In this paper we propose and demonstrate a new device, the p-DCC laser, which is grown on p-type substrates using a three-melt LPE technique. This diode exhibits a threshold comparable to conventional GalnAsP lasers, but with a high TQ (180 K for 1.3 urn lasers). We believe that this performance of the p-DCC structure is the result of improved carrier confinement and cooling of hot carriers.
© 1986 Optical Society of America
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